P+-InAsSbP/n-InAs photodiodes for IR optoelectronic sensors
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Abstract
The performance of p+-InASSbP/n-InAs infrared (IR) photodiodes prepared by liquid phase epitaxy technique (LPE) is investigated. The current-voltage and capacitance-voltage characteristics, photoresponse and noise spectra are investigated in the temperature range 77-300 K. The trap-assisted current is calculated and compared with experimental data. It is found that at near-room temperatures and small reverse biases U ≤ 0.2 V experimental I-U characteristics are determined by diffusion and generation-recombination mechanisms. The trap-assisted tunnelling is shown to be dominant at higher reverse biases. The heterojunction photodiodes have superior photoresponse spectra in comparison with homojunction photodiodes and high threshold parameters.
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Sukach</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Semiconductor Physics of NAS of Ukraine</s1><s2>Ki ev</s2><s3>UKR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Ukraine</country><wicri:noRegion>Institute of Semiconductor Physics of NAS of Ukraine</wicri:noRegion></affiliation></author><author><name sortKey="Stariy, S V" uniqKey="Stariy S">S. V. Stariy</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Semiconductor Physics of NAS of Ukraine</s1><s2>Ki ev</s2><s3>UKR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Ukraine</country><wicri:noRegion>Institute of Semiconductor Physics of NAS of Ukraine</wicri:noRegion></affiliation></author><author><name sortKey="Zotova, N V" uniqKey="Zotova N">N. V. 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Stus</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Semiconductor Physics of NAS of Ukraine</s1><s2>Ki ev</s2><s3>UKR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Ukraine</country><wicri:noRegion>Institute of Semiconductor Physics of NAS of Ukraine</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">06-0287158</idno><date when="2005">2005</date><idno type="stanalyst">PASCAL 06-0287158 INIST</idno><idno type="RBID">Pascal:06-0287158</idno><idno type="wicri:Area/Main/Corpus">008E46</idno><idno type="wicri:Area/Main/Repository">009784</idno><idno type="wicri:Area/Russie/Extraction">000354</idno></publicationStmt><seriesStmt><idno type="ISSN">0277-786X</idno><title level="j" type="main">Proceedings of SPIE, the International Society for Optical Engineering</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Ambient temperature</term><term>Binary compounds</term><term>Indium arsenides</term><term>Infrared detectors</term><term>LPE</term><term>Optoelectronic devices</term><term>Photodetectors</term><term>Photodiodes</term><term>Radiation detectors</term><term>Tunnel effect</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Effet tunnel</term><term>Photodiode</term><term>Photodétecteur</term><term>Détecteur rayonnement</term><term>Détecteur IR</term><term>Dispositif optoélectronique</term><term>Epitaxie phase liquide</term><term>Température ambiante</term><term>Composé binaire</term><term>Indium arséniure</term><term>InAs</term><term>As In</term><term>0757K</term><term>8560G</term><term>InAsSbP</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The performance of p<sup>+</sup>-InASSbP/n-InAs infrared (IR) photodiodes prepared by liquid phase epitaxy technique (LPE) is investigated. The current-voltage and capacitance-voltage characteristics, photoresponse and noise spectra are investigated in the temperature range 77-300 K. The trap-assisted current is calculated and compared with experimental data. It is found that at near-room temperatures and small reverse biases U ≤ 0.2 V experimental I-U characteristics are determined by diffusion and generation-recombination mechanisms. The trap-assisted tunnelling is shown to be dominant at higher reverse biases. The heterojunction photodiodes have superior photoresponse spectra in comparison with homojunction photodiodes and high threshold parameters.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0277-786X</s0></fA01><fA05><s2>5957</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>P<sup>+</sup>-InAsSbP/n-InAs photodiodes for IR optoelectronic sensors</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Infrared photoelectronics : 30-31 August 2005, Warsaw, Poland</s1></fA09><fA11 i1="01" i2="1"><s1>TETYORKIN (V. V.)</s1></fA11><fA11 i1="02" i2="1"><s1>SUKACH (A. V.)</s1></fA11><fA11 i1="03" i2="1"><s1>STARIY (S. V.)</s1></fA11><fA11 i1="04" i2="1"><s1>ZOTOVA (N. V.)</s1></fA11><fA11 i1="05" i2="1"><s1>KARANDASHEV (S. A.)</s1></fA11><fA11 i1="06" i2="1"><s1>MATVEEV (B. A.)</s1></fA11><fA11 i1="07" i2="1"><s1>STUS' (N. 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Conference</s1><s3>Warsaw POL</s3><s4>2005</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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